High-density radical source device
It is a suitable radical source for power devices and LEDs.
Our company offers a "high-density radical source device" that supplies high-density N radicals, improving the film deposition rate of MBE compared to conventional radical sources. Designed to prevent the generation of impurities, it enables faster growth while maintaining high-quality crystal growth of GaN. It can also generate O radicals, allowing for expansion into oxides. Additionally, we have a variety of products including radical monitors, compact VUV spectrometers, and CCP-type plasma etching devices. 【Features】 ■ Ion removal and electron removal mechanisms included ■ High-density radical generation of H, N, and O ■ ICF114 flange mounting ■ External control function for gas supply ■ Orifice for adjusting process chamber pressure *For more details, please download the PDF or feel free to contact us.
- Company：NU-Rei
- Price：Other
